GaN transistors are smaller, more powerful, and more efficient compared to silicon transistors. They can switch faster, around 40 million times a second, which is four times faster than silicon transistors. GaN transistors have a power efficiency of over 95%, compared to silicon transistors’ 87% efficiency.
Newer GaN USB chargers are physically smaller and more efficient than older silicon technology chargers. The increased efficiency is important because it generates less waste heat. Chargers that use GaN technology also tend to feel less hot to the touch compared to chargers using silicon transistors.
GaN transistors inside chargers can also respond to events such as overheating or overvoltage much quicker than older transistors, making them safer in use.
